Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

Abstract

Graphical abstractDisplay Omitted Highlights? Ni/n-GaAs/In Schottky diodes are fabricated by magnetron DC sputtering system. ? The zero-bias barrier height and ideality factor show temperature dependence. ? Temperature dependence of the parameters was attributed to Gaussian distribution in the barrier. ? Temperature dependent flat-band barrier was explained by temperature dependence of band-gap. ? It is recommended that the values of ?s0 and α should be placed on commercial catalogue. Temperature-dependent current-voltage (I-V) characteristics of Ni/n-GaAs/In Schottky diodes which are fabricated by magnetron DC sputtering system have been studied. The zero-bias barrier height (BH) versus temperature plot involves two distinct regions. At low temperatures, the zero-bias BH increases with increasing temperature due to lateral distribution of the barrier height. Werner and Guttler's model has been employed to analyze the temperature dependence of barrier height and ideality factor at low temperatures. The standart deviation of the zero-bias BH was calculated as 64mV and the voltage coefficients of the barrier height were determined as ?2=-6.94i?10-4 and ?3=-5.73mV. At high temperatures, the zero-bias BH decreases with increasing temperature because of the temperature dependence of semiconductor band gap. The non-linearity has been observed in the Richardson plot due to temperature dependence of the zero-bias BH. Furthermore, the T0 effect and the temperature dependence of flat band BH of the diodes were investigated.