Abstract
The difference in apparent barrier height as obtained from capacitance-voltage and current-voltage measurements on Al/ p-InP Schottky barriers was explained by introducing a distribution of barrier heights over the contact area and a temperature dependence of the real barrier height. Taking into account this barrier height distribution and the temperature dependence of the barrier height, we were also able to explain the measured values of the effective Richardson constant. As a result a modified expression for the temperature dependence of the current-voltage characteristics was obtained.
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