Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry–Perot lasers

Abstract

GaInAs quantum wire (QWR) heterostructures have been grown by molecular beam epitaxy using the strain-induced lateral-layer ordering (SILO) process. Broad-area Fabry–Perot QWR lasers have been fabricated from this material. The lasing wavelength from the QWR laser shifts at a rate of 0.9 Å/°C between 77 and 300 K compared to 4.6 Å/°C for a quantum well laser control sample. Furthermore, the gain spectra of the QWR laser are derived from the amplified spontaneous emission spectra at 77 and 300 K using the Hakki–Paoli method. The gain peak is also stabilized against temperature changes indicating that temperature stable lasing behavior seen in SILO grown GaInAs QWR Fabry–Perot laser diodes is due to a temperature stable band gap.