Growth of GaInAsP quantum wire heterostructures using the strain-induced lateral-layer ordering process

Abstract

Abstract We present a generalized strain-balance theory on the strain-induced lateral-layer ordering (SILO) process, where various combinations of short-period superlattice (SPS) constituents are used to fabricate novel quantum wire (QWR) heterostructures. Based on the theory, we have fabricated two sets of QWRs in the GaInP and GaInAsP material systems with emission wavelengths of 6200 A and 1 μm, respectively. Growth of ( GaP ) 2 ( InP ) 1 SPS was used to create QWRs on GaAs0.66P0.34-based substrates. Also, QWRs were formed using ( GaP ) 2.2 ( InAs ) 1 SPS on GaAs substrates. In both these cases, the monolayer pairings of the SPS constituents were unequal. Transmission electron microscopy and polarized photoluminescence spectroscopy confirm the formation of QWRs. These results support the validity of the generalized theory of the SILO process.