Abstract
In this work the influence of temperature on strained n-channel multiple gate devices after proton irradiation is analyzed for two different splits: unstressed and highly stressed devices. This study is based on the analysis of the subthreshold slope, drain induced barrier lowering, transconductance, output conductance and intrinsic voltage gain. It is observed that the influence of a temperature increase on the devices performance is higher than the influence of stress and proton radiation.
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