Abstract
In this paper, the influence of proton irradiation is experimentally studied in triple gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance and Drain Induced Barrier Lowering (DIBL) will be compared in the DT mode and the standard biasing configuration. Moreover, the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be studied. The results indicate that the DTMOS FinFET structure shows superior electrical characteristics and a better analog performance before and after irradiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
