Abstract
In this paper, the influence of proton irradiation is experimentally studied in triple gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance and Drain Induced Barrier Lowering (DIBL) will be compared in the DT mode and the standard biasing configuration. Moreover, the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be studied. The results indicate that the DTMOS FinFET structure shows superior electrical characteristics and a better analog performance before and after irradiation.
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