Abstract
The goal of this work is to study the influence of the germanium concentration in the source region of vertical TFETs for different temperatures. Vertical TFETs with the source region composed by Si(100%), Si0.73Ge0.27, Si0.56Ge0.44 and Ge(100%) were studied in the temperature range from room temperature to 150oC. The main analog parameters like transconductance, output conductance and intrinsic voltage gain were analyzed. With increasing Ge concentration the drive current, the subthreshold swing, the transconductance and the intrinsic voltage gain improves while the output conductance and 1/f noise degrades. The temperature increase impacts negatively the output conductance and the intrinsic voltage gain, in spite of improving the transconductance due to the higher band-to-band tunneling caused by the source bandgap lowering.
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