Abstract
Temperature dependence of the ion beam induced charge (IBIC) collection efficiency was studied in CdZnTe (CZT) in the range 166–330 K. A lateral surface between sputtered Au electrodes of the simple planar counter-grade CZT was irradiated by a focused 3 MeV proton microbeam. Measured charge collection efficiency profiles change with temperature. In order to understand better the charge collection mechanism at different temperatures time resolved ion beam induced charge (TRIBIC) technique was applied as well. Charge transients from the output of the preamplifier recorded by a fast storage oscilloscope showed that the electron transport is strongly influenced by temperature. Both IBIC and TRIBIC measurements showed negligible hole charge collection contribution in the studied detector.
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