Analysis of uniformity of as prepared and irradiated SI GaAs radiation detectors

Abstract

SI (semi-insulating) LEC (liquid encapsulated Czochralsky) GaAs (gallium arsenide) Schottky barrier detectors have been irradiated with high energy protons (24 GeV/c, fluence up to 16.45/spl times/10/sup 13/ p/cm/sup 2/). The detectors have been characterised in terms of I/V curves, charge collection efficiency (cce) for incident 5.48 MeV /spl alpha/-, 2 MeV proton and minimum ionizing /spl beta/-particles and of cce maps by microprobe technique IBIC (ion beam induced charge). At the highest fluence a significant degradation of the electron and hole collection efficiencies and a remarkable improvement of the FWHM energy resolution have been measured with /spl alpha/- and proton particles. Furthermore the reduction in the cce is greater than the one measured with /spl beta/-particles and the energy resolution worsens with increasing the applied bias, V/sub a/, above the voltage V/sub d/ necessary to extend the electric field all the way to the ohmic contact. On the contrary, in the unirradiated detectors the charge collection efficiencies with /spl alpha/-, /spl beta/- and proton particles are quite similar and the energy resolution improves with increasing V/sub q/>V/sub d/. IBIC spectra and IBIC space maps obtained by scanning a focused (8 /spl mu/m/sup 2/) 2 MeV proton microbeam on front (Schottky) and back (ohmic) contacts, support the observed electric field dependence of the energy resolution both in unirradiated and most irradiated detectors. The results obtained let us explain the effect of the electric field strength and the plasma on the collection of the charge carriers and the FWHM energy resolution.