Abstract
Enhanced temperature stability in tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers is demonstrated. Value of T0=363 K in the temperature range 5°C<T<60°C and T0=202 K in the range 60°C<T<100°C are derived from the temperature-dependent 1ight-current characteristics. The variation of the slope efficiency of the devices against temperature confirms that reduced carrier leakage and non-radiative recombination contribute to the observed behaviour.
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