Abstract
Ferroelectricity and polarization-switching behavior were investigated in Hf0.5Zr0.5O2 films from 25°C to 150°C. It is found that a large remnant polarization (Pr) of about 30 μC/cm2 is achieved, and Hf0.5Zr0.5O2 films behave a good stability in a wide range of temperature. By analyzing the physical mechanism of leakage current, it indicates that electron conduction mechanism obeys Schottky emission at low voltages, and Fowler-Nordheim (F-N) tunneling mechanism along with space-charge-limited-conduction (SCLC) at high voltages. The temperature dependent polarization switching and related leakage current behaviors reveal a strong thermal activation of the oxygen vacancies, which can explain the varieties of ferroelectricity and leakage current under different temperatures.
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