Abstract
Excellent ferroelectricity is realized in post deposition annealing (PDA) derived Hf0.5Zr0.5O2 (HZO) films using an ultrathin Ti metal bottome electrode. A large remnant polarization (Pr) of 28.65 μC/cm2 at 4 MV/cm is obtained without any wake-up process in a Ti/HZO/Ti/Si capacitor. The effects of different top electrodes (Ta, Zn, Ti, Cu, Pt) on the electrical properties of metal/HZO/Ti/Si capacitors are also compared and evaluated. Fatigue performance up to continuous 108 cycles without any degradation, demonstrating excellent endurance for all samples. In addition, differences of coercive field (Ec) are originated from different work functions of top electrodes, which are also analyzed through leakage conduction. Ultrathin TiO2 seed layer formed through the oxidation of Ti can provide a template for the growth of ferroelectric HZO. This study can provide an effective and simple pathway to grow high performance HZO ferroelectric films, and optimize the interface quality in practical applications.
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