Abstract
In this work, the effects of annealing time (15, 30 [11], 45 minutes) on the MOS characteristics of RF magnetron sputtered Y <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> 0 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate oxide on Si substrate have been studied.
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