Abstract
In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm−2 (25 °C) to 6.3 μC cm−2 (75 °C) is only 3%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30% of the original 2Pr value (6.3 μC cm−2) can be held after being fatigued up to 108 endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.
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