Abstract
A special feature of ferroelectric HfO2 films is that they have large coercive fields (EC), as large as 1 MV/cm and more. A merit of the large coercive field is that a sufficient memory window is attainable even in ultrathin films. For example, a 2-V-memory window is available by 10-nm-thick Hf-Zr-O ferroelectric film. Compared with the conventional ferroelectric oxide capacitors using Pb(Zr, Ti)O3 and SrBi2Ta2O9 that applies around 100-nm-thick films, the ferroelectric HfO2 films contribute to the scaling of film thickness about one order. It is attractive for the development of high-density non-volatile memories integrated on LSI. On the other hand, the large coercive fields of ferroelectric HfO2 films bring serious concerns such as breakdown and endurance in capacitors. In this work, we studied the influence of large coercive fields on the endurance properties of Hf-Zr-O capacitors. Metal-ferroelectric-metal (MFM) capacitors that consist of TaN/Hf-Zr-O/TaN were prepared on heavily doped Si substrates. TaN electrode films were deposited by DC sputtering, using Ta target and mixture gas of Ar and N2. Hf-Zr-O films were prepared by RF sputtering, using HfO2 and ZrO2 targets and Ar gas. The metal composition was adjusted to Hf : Zr=50 : 50, and the thickness is 10 nm. After deposition of the top TaN film, crystallization anneal was processed in a vacuum condition at 700 degree Celsius. Finally, top electrodes were patterned by photolithography and dry etching. Ferroelectric properties of 10-nm-thick Hf-Zr-O capacitors were investigated by the polarization-voltage measurements. The ECvalue of this capacitor was evaluated to be 1 MV/cm. The electrical breakdown by the DC mode was measured to be about 4 MV/cm. Remnant polarization (Pr) and endurance properties of the capacitors are summarized in the figure. The Pr is faint when the applied electric field is less than the EC. The Pr value increases drastically when the electric fields are set between EC and 2xEC, and then gradually saturates over 2xEc. Thus a larger electric field is favorable for the achievement of large and stable polarization. In contrast, the endurance characteristics show a negative trend with the electric field. The endurance cycle as large as 108 was observed when the electric field is 2xEC, but it decreases drastically with the increment of electric field over 2xEC. It indicates that the capacitors are damaged even when the electric field is much lower than the breakdown field. Although a better endurance is expected at electric field lower than 2xEC, it makes a sacrifice of the Pr value and the stability. This trade-off relationship is considered to be a critical hurdle for the application of ferroelectric HfO2 capacitors. This work was supported by JST CREST Grant Number JPMJCR14F2, Japan. Figure 1
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