Abstract
Recent simulations and experiments have hinted that the solid temperature may affect the dynamics of defect formation when the energies of bombarding ions fall below about 100 eV. The present work offers direct experimental confirmation of this phenomenon through measurements of the energy thresholds for ion-enhanced surface diffusion of indium on silicon and germanium, where transport rates depend upon surface defect formation. Such temperature-dependent energy thresholds may offer a new means for modulating sputtering and defect formation in a variety of ion processing applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
