Temperature dependence on the response of inversion layer with zirconium titanate as oxide in MOS configuration

Abstract

Highly oriented and polycrystalline zirconium titanate thin films were deposited onto a p-type silicon substrate using laser ablation technique. Capacitance–voltage characteristics of metal-oxide semiconductor (MOS) capacitors were investigated in the temperature range between room temperature and 250°C for both the polycrystalline and highly oriented zirconium titanate thin films. The high frequency C– V curve has been measured at room temperature. There is a transition to low frequency C– V curve on supplying thermal energy to the MOS capacitor. A plot of the transition frequency versus reciprocal temperature shows an activation energy of n i , which is dependent on the temperature and is equal to half of the silicon band gap energy. This indicates that the dominating mechanism is the generation–recombination of the minority carriers in the space charge region, related to bulk traps of silicon.