Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers

Abstract

The gain of p-doped and intrinsic InAs∕GaAs quantum dot lasers is studied at room temperature and at 350K. Our results show that, although one would theoretically expect a higher gain for a fixed carrier density in p-doped devices, due to the wider nonthermal distribution of carriers amongst the dots at T=293K, the peak net gain of the p-doped lasers is actually less at low injection than that of the undoped devices. However, at higher current densities, p doping reduces the effect of gain saturation and therefore allows ground-state lasing in shorter cavities and at higher temperatures.