Temperature dependence of single-event transient response in devices with selective-buried-oxide structure

Abstract

The silicon-on-insulator (SOI) device has been found to possess low leakage current and high operation speed due to reduced internal capacitances. The sensitive volume for charge collection in SOI device is smaller than that in bulk-silicon device, which improves the ability of SOI devices to resist single-event effect (SEE). In spite of these benefits, the SOI device has certain undesirable effects such as the kink effect. To mitigate the kink effect, selective-buried-oxide (SELBOX) SOI structure has been introduced. Space-borne electronic circuits based on SOI technology recently have been used in high radiation and extreme temperature environments. However, temperature affects internal carrier transport process and impact ionization process, which makes single-event transient (SET) pulse widths increased. Most of previous researches regarding temperature dependence of SEE were for SOI floating-body devices. But the influence of operating temperature on SEE of SELBOX SOI devices are yet unclear. In this paper, an SOI floating-body device and a SELBOX SOI device under 90 nm process are established by three-dimensional device simulation, and then temperature dependence of SET response in partially depleted SOI inverter chains is studied by a mixed-mode approach over a temperature range from 200 K to 450 K. Simulation results show that the N-type SELBOX SOI device has a better ability to resist SEE than the floating-body device, while the P-type SELBOX SOI device has the same ability to resist SEE at high linear energy transfer value as the floating-body device. And temperature dependence analysis of charge collection indicates that there is only drift-diffusion process in the N-type SELBOX SOI device. The amount of charge collection in the N-type SELBOX SOI device almost does not change with the increase of temperature. In addition, both the P-type SELBOX SOI device and the P-type floating-body device have a bipolar amplification process. With the increase of temperature, the bipolar amplification process in the substrate turns more serious. However, it suppresses the bipolar amplification process of the source because of SELBOX structure, so that the amount of charge collection is reduced in the drain significantly. According to our simulation results, compared with the floating-body device, the SELBOX SOI device can very well suppress the influence of temperature on SET pulse.