Abstract
Temperature dependence of electron mobility in Si inversion layers is investigated using channel conductance measurements in the temperature range from 15 to 300 K. The electron mobility is analyzed by using the theoretical model in which two-dimensional electron gas confined in the inversion layer interacts with acoustic phonons, intervalley phonons, surface roughness, and ionized impurities. At higher temperatures above 100 K, the electron mobility is dominated by acoustic phonon scattering and intervalley phonon scattering. At temperatures below 100 K, ionized impurity scattering plays an important role in determining the mobility in the case of low electron sheet densities, whereas in the case of higher electron sheet densities, surface roughness scattering becomes important.
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