Abstract
The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10–400 K. The variation of electrical parameters (threshold voltage, field effect mobility, sub-threshold swing, and leakage current) with decreasing temperature are then extracted and analyzed. Moreover, the dominated carrier transport mechanisms at different temperature regions are investigated. The experimental data show that the carrier transport mechanism may change from trap-limited conduction to variable range hopping conduction at lower temperature. Moreover, the field effect mobilities are also extracted and simulated at various temperatures.
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