Abstract
Temperature dependence of ambipolar mobility for a 0.1 eV n-type HgCdTe photoconductor was derived in the 10–100 K temperature range, from experimental results on excess minority carrier lifetime and ratio of responsivity at low electric field to that at high field. It was found that the ambipolar mobility decreases exponentially above 60 K, while it had a constant value between 30 and 60 K. The mobility behavior above 60 K indicates that a dominant scattering mechanism is a polar optical phonon scattering with ~16 meV phonon energy. The results will be useful for design of SPRITE detectors.
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