Abstract
Enhanced photocurrent models are derived for time-dependent photocurrent prediction in modern microcircuit pn junctions. These models incorporate additional effects not in the Wirth-Rogers photocurrent model. The enhanced models include high injection effects on excess minority carrier lifetime, electric fields in the quasi-neutral regions, and proximity effects of contacts and high/low junctions. These effects are most pronounced in high-resistivity material. The enhanced photocurrent model was constructed for use in computer simulation codes and has been successfully implemented in SPICE 2G.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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