Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser

Abstract

Data are presented on the thermal behavior of a high performance 1 μm wide stripe quantum-well (QW) transistor laser in continuous-wave single-mode operation up to 40 °C, multimode to 55 °C. The electrical and optical outputs of the TL are found to be complementary across temperature, directly correlated with the spontaneous and stimulated radiative recombination process. The QW transistor laser operates on two states, lower and upper, at two characteristic temperatures, T0 (ITH=I0 exp(T/T0)). On the lower state transition, T00=40 K, and on the upper state, T01=70 K, the difference in performance and speed (bandwidth) connected directly to the different recombination lifetimes on each state and the confining barrier heights of the lower |0⟩ and upper state |1⟩.