Abstract
V2VI3-based materials are the best materials for thermoelectric cooling devices. Interest in studying the transport properties of V2VI3 thin films has increased after it was found that V2VI3 belong to the class of topological insulators. In this work, the dependences of electrical conductivity, Hall coefficient, charge carrier mobility on magnetic field and temperature of Bi2(Te0.9Se0.1)3 films with thicknesses 48 and 130 nm were measured and interpreted. The transport properties in the thin-film and bulk states were compared. The boundaries between weak and strong magnetic fields were determined. The obtained results are important for solid-state physics development and practical applications.
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