Abstract
Abstract We present the temperature and Ge fraction dependence of the broad peaks at the lower wavenumber side of the Ge-Ge vibration mode in Raman spectra from Ge-rich Si1−xGex thin films (x = 0.750, 0.852, and 0.918) investigated by oil-immersion Raman spectroscopy. The sample temperature was elevated by increasing laser power and estimated using the relation between Raman shift ω and temperature T (dω/dT) of Ge-Ge vibration mode. The broad peaks observed from all the Ge-rich SiGe thin films shifted toward the lower wavenumber side with increasing laser power. We confirmed that dω/dT of the broad peak differs from the Ge-Ge vibration mode and changes with increasing Ge fraction. In addition, we found that the correlation between Ge fraction and the peak intensity ratio of the broad peak and the Ge-Ge vibration mode is almost the same at various laser power conditions.
Published Version
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