Abstract
We have reported the use of transmission electron microscopy (TEM) with simultaneous cathodoluminescence (CL) for the study of defects in opto-electronic semiconductors such as InP and ZnSe. The effect of individual dislocations on the efficiency of the near band edge luminescence was investigated; the main observation reported for InP was the quenching at some dislocations of the exciton-related emission. No correlation was found between dislocation type and luminescence behaviour. Further, during the course of this work, a better appreciation has been gained of factors which are important in transmission CL studies, for example, the effects of excitation, strain, surface recombination, electric fields and optical interference. We describe some of them here and new results from dislocation groups in InP.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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