Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

Abstract

Transmission electron microscopy (TEM) and scanning electron microscope cathodoluminescence (CL) have been used to determine the influence of edge and screw dislocations on the light emitting properties of InxGa1−xN quantum wells. TEM is used to locate and identify the nature of dislocations. CL on the same samples is used to determine the spatial variation of the luminescence. A direct correlation of CL maps with TEM has been established, showing that threading edge dislocations act as nonradiative recombination centers with an associated minority carrier diffusion length of 200 nm. Threading dislocations of screw and mixed type were found to be associated with surface pits which were also nonradiative in the quantum well (QW) emission, but owing to the absence of QW growth on the pit facets. The contributions of edge and screw/mixed dislocations to the reduction of the QW emission are quantified, and the wider significance of these results is discussed.