Abstract
The characteristic shape of voids in UHV-deposited amorphous Si layers is investigated by TEM analysis. This shape is determined by the deposition temperature and by subsequent UHV annealing leading to densified layers. Amorphous layers with voids shaped as isolated holes can be converted to monocrystalline layers having also isolated holes. The as-deposited amorphous layers appear to be under tensile stress, which increases after UHV annealing. To explain the cracks observed in undensified layers with vertical pores it has to be assumed that the crack resistance is lowest in that case. A way to eliminate defects and cracks in Si layers made by lateral solid phase epitaxial growth is suggested.
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