On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO2 Patterns

Abstract

Mechanisms of the lateral solid phase epitaxial (L-SPE) growth of amorphous Si films, which were vacuum-deposited on (100)Si substrates with SiO2 patterns, are investigated using experimental data from cross-section transmission electron microscopy and other techniques, and results are compared with theory. In the case of the L-SPE growth along the [011] direction, it is concluded that the (111) facet is formed at the SiO2 pattern edge during the vertical SPE stage and the L-SPE proceeds from the facet plane by microtwin-accelerated growth. For the growth along the [010] direction, it is found that the (110) facet plane is formed during the vertical SPE stage but changes to the folded {111} facet planes during the initial L-SPE growth. Growth models in the L-SPE along both directions are also presented.