Abstract
Key attributes of MRAM (magnetoresistive random access memory) technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved, we demonstrated 1 Kbit MRAM array fabricated by combination of hybrid technology of standard deep sub-micron CMOS and MTJ process. The main issues in the array, which can be fundamental limitation of MRAM technology, are considered. The topic covers basic issues of deep sub-micron MRAM core cell and consider the work related to the MRAM issues, such as cell stability and switching process.
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