Abstract
The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.
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