Abstract
A high-quality SIMOX wafer was produced by a combination of low-dose implantation and annealing using the ITOX process, which enables precise control of the superficial silicon thickness and improvement of the BOX characteristics, together with an increase in BOX thickness. Recently, a further quality improvement was achieved using nitrogen-doped Czochralski silicon as the SIMOX starting material, which is effective in eliminating shallow surface pits. 300 mm SIMOX samples were manufactured successfully in the late 2000s, showing that the advantage of SIMOX technology will be maintained through the next generation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
