Abstract
The extended defects in nitrogen-doped Czochralski (NCZ) silicon and conventional Czochralski (CZ) silicon during the diode process were systematically investigated by means of optical microscopy and transmission electron microscopy. It was revealed that during the phosphorous diffusion (1230°C/2 h), the dislocations and stacking faults generated simultaneously in the NCZ silicon while in the CZ silicon only dislocations were observed. After the boron diffusion (1260°C/30 h), only dislocations as the extended defects were observed in both the NCZ and CZ silicon. It is preliminarily believed that the difference between the formation of extended defects in the NCZ and CZ silicon wafers is ascribed to the effect of nitrogen on oxygen precipitation.
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