Abstract
Experiments were performed to investigate the thermal donors (TDs) generated in nitrogen-doped Czochralski (NCZ) silicon and conventional Czochralski (CZ) silicon when annealed under a high pressure (1 GPa). The specimens were first annealed at 450°C under atmospheric and high pressures, respectively, to generate thermal donors, then treated at 650°C to annihilate them. It is found that TDs’ generation rate and concentration are enhanced by the high pressure for both NCZ and CZ silicon, but can be effectively annihilated during annealing at 650°C for only 10 min. It is concluded that enhancement of the electron concentration was due to the increased diffusivity of oxygen under high pressure.
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