Abstract
A technique of scavenging the SiO2 interfacial layer (IL) to improve the electrical performance of Al2O3 as the interpoly dielectric for flash memories has been studied. Scavenging was performed by the reaction of a thin La2O3 layer with the native oxide to form a high-κ lanthanum silicate. Significant improvement in the charge trapping and leakage characteristics were obtained. Transmission electron microscopy analysis was done to corroborate the electrical results. Results show that seven orders of magnitude leakage reduction was achieved by the replacement of the SiO2 IL with a higher-κ dielectric LaSiO at the Si interface.
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