Abstract
The full-spatial decomposition of transverse electric (TE)/transverse magnetic (TM) mode in AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) has been experimentally investigated by introducing self-built light intensity test system mainly composed of angle resolution bracket, Glan–Taylor prism and spectrometer. Through roughening the sapphire sidewall, the extraction efficiency of DUV-LED is improved, for both TE and TM mode light with no polarization selectivity. The introduction of self-built light intensity metrology system has been reflected via scribing the sapphire sidewalls using various laser conditions, which show a reliability in the enhancement validation of the light extraction efficiency. More importantly, the self-built light intensity test system enables effective feedback on epitaxial structures and chip structure design and provides a new perspective to design high efficiency AlGaN-based DUV-LEDs.
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