Abstract
In this paper we demonstrate the feasibility of FDSOI device TCAD simulations down to deep cryogenic temperatures. To this purpose, Maxwell-Boltzmann carrier statistics is replaced by an analytical approximation for the Fermi-Dirac integral with 3D density of states. The device electrostatic is investigated by solving the Poisson equation in 2D, whereas the transport is simulated using the Drift-Diffusion model. We explore the impact of temperature on device performances in linear and saturation regions as well as the impact of short channel effects, accounted for various gate and spacer lengths, at room and deep cryogenic temperatures. Finally, the obtained results are compared to some experimental data, highlighting the role of TCAD simulations in providing insights in device physics and performances.
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