Abstract
Amorphous tantalum oxide films have been prepared by the ArF excimer laser ablation of Ta 2O 5 in the presence of O 2. The deposition rate increases linearly with an increase in the laser energy. The substrate temperature does not influence the deposition rate at an O 2 flow rate of 5 sccm. But at an O 2 flow rate of 100 sccm, the deposition rate decreases strikingly with the substrate temperature. The refractive indices to the films tend to be low under mild deposition conditions.
Published Version
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