Abstract
Tantalum oxide films were deposited on silicon substrates at a temperature of ∼450°C by heating a pure tantalum foil in a rough vacuum. The films were amorphous in structure and consisted of fully oxidized Ta2O5 and (TaOx, x<2.5) suboxides. This feature resulted in strong visible light emission from the films further oxidized in the air at temperatures of 200–300°C. The mechanism for this photoluminescence behavior of the amorphous tantalum oxide films was also investigated and discussed. This study suggests that wide-band-gap materials could act as effective visible light emitters and provides a simple route to synthesize such materials.
Published Version
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