Abstract
The refractive index, n, and extinction coefficient, k, of n-type TBP (tertiarybutylphosphine) doped a-Si:H films is reported. TBP is preferred over phosphine because of its lower toxicity and pyrophoricity. The films were deposited using glow discharge (plasma lab μP) technique. The optical constants, n, k and absorption coefficient, α are determined as functions of wavelength, λ and doping concentration. The refractive index is found to decrease as the TBP/SiH 4 ratio increases from 0.1% to 3%. This decrease is due to increase in the internal strain in amorphous network. Also the refractive index and extinction coefficient decrease with increase in wavelength in the range of 600 to 900 nm.
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