Abstract
The authors report on tailoring detection wavelengths of InGaAs quantum wire infrared photodetectors, using different numbers of short-period superlattice (SPS) pairs to vary the thickness of quantum wires (QWRs) along the growth direction, prepared by the strain-induced lateral-layer ordering process. The QWR characteristics are maintained for QWRs using either In0.52Al0.24Ga0.24As or In0.52Al0.48As barriers and for thin QWR layers made of six SPS pairs. Sharp photoresponses at 6.3 and 8.4 μm are observed for quantum wire infrared photodetectors with ten and six SPS pairs, respectively.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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