Abstract
The requirement of high memory bandwidth for next-generation computing systems moved the attention to the development of devices that can combine storage and logic capabilities. Domain wall-based spintronic devices intrinsically combine both these requirements making them suitable both for non-volatile storage and computation. Co\Pt and Co\Ni were the technology drivers of perpendicular Nano Magnetic Logic devices (pNML), but for power constraints and depinning fields, novel CoFeB\MgO layers appear more promising. In this paper, we investigate the Ta2\CoFeB1\MgO2\Ta3 stack at the simulation and experimental level, to show its potential for the next generation of magnetic logic devices. The micromagnetic simulations are used to support the experiments. We focus, first, at the experimental level measuring the switching field distribution of patterned magnetic islands, Ms via VSM and the domain wall speed on magnetic nanowires. Then, at the simulation level, we focus on the magnetostatic analysis of magnetic islands quantifying the stray field that can be achieved with different layout topologies. Our results show that the achieved coupling is strong enough to realize logic computation with magnetic islands, moving a step forward in the direction of low power perpendicularly magnetized logic devices.
Highlights
The increasing demand of processing power of modern computing systems moved the attention to develop solutions to mitigate the impact of the so called memory-wall.[1]
Perpendicular Nano Magnetic Logic is one of the promising beyond CMOS technologies listed in the International Roadmap for Devices and Systems (IRDS 2017)[2] capable of providing both these features. pNML is a technology in which the information, encoded in non-volatile magnetic states, is elaborated and transmitted exploiting the magnetic dipole coupling between adjacent elements
The magnetic properties of the used Ta2\CoFeB1\MgO2\Ta3 stack are derived from vibrating sample magnetometer measurements (Ku is calculated via the area method) and cross-checked via broadband ferromagnetic resonance spectroscopy
Summary
The increasing demand of processing power of modern computing systems moved the attention to develop solutions to mitigate the impact of the so called memory-wall.[1]. To define the propagation direction and enhance its efficiency a weak spot in the material is artificially generated Such zone is called artificial nucleation center (ANC) and can be defined with a local Focused Ion Beam (FIB) irradiation with Ga+ ions during the fabrication process.[9]. Co\Ni thin films showed to be promising due to the perpendicular anisotropy and the possibility to locally tailor their characteristics via ion beam irradiation.[13,14] Another promising solution is represented by the CoFeB\MgO stacks. The perpendicular anisotropy, arising at the ferromagnet-oxide interface, can be finely tuned during the fabrication and modulated with electric fields.[15,16] They received great attention for the excellent compatibility with magnetic tunnel junction in which they are used both as free and reference layer.[17–19]. The gate driver is thereby addressed by an Agilent 81112A Pulse Generator
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