Magnetic oxide nanowires with strain-controlled uniaxial magnetic anisotropy direction

Abstract

While magnetic nanowires generally have a preferential magnetization direction along the wire axis to minimize magnetostatic energy, it is shown here for epitaxial magnetic oxide nanowires that substrate-induced strain can be used to tailor the magnetic easy axis in any direction. La0.67Sr0.33MnO3 (LSMO) nanowires were prepared by pulsed laser deposition of LSMO thin films on NdGaO3 (NGO) substrates of two different orientations [NGO(110)o and NGO(010)o], followed by patterning into arrays of nanowires by laser interference lithography. The uniaxial compressive strain from the substrate induces a strong uniaxial magnetic anisotropy in the LSMO that dominates the anisotropy. Hence, one obtains LSMO nanowires having a magnetic easy axis that can lie in any direction, including perpendicular to the wire axis. In marked contrast, similar nanowires on SrTiO3(001) substrates without significant uniaxial strain exhibit the usual preferential magnetization direction along the wire axis, as dictated by magnetostatic shape anisotropy. The tunable magnetic anisotropy direction is a useful feature for applications of magnetic nanowires in magnetic memory, sensor, and logic devices.