Abstract
This paper proposes a systematic procedure to calibrate the parameters of the drift-diffusion (DD) model for a performance evaluation of InGaAs MOSFETs in the quasi-ballistic regime. The simulation results of a deterministic multi-subband Boltzmann transport equation (BTE) solver serve as the standard. The DD model is calibrated both under low and high electric fields. The electrostatic characteristics, low field mobility model, and high field saturation model are calibrated in proper sequence, and a good agreement among the drive current, carrier distribution, and velocity distribution are achieved between the results of the calibrated DD model and the BTE solver. The proposed calibration procedure can also be employed in devices made of other materials.
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