Abstract
The Drift-Diffusion model is still by far the most frequently used numerical device model in industry today. One important reason for this success is the robust numerical implementation of this model providing CPU efficient DC, AC, transient, and noise simulations with high accuracy and high convergence reliability. On the other hand, many of todays design applications vary strain, crystal and channel orientation, material composition, and the carrier confinement. Such applications certainly require the solution of the Boltzmann Transport Equation in order to be predictive. It will be demonstrated in this paper that with new alternative discretization and solution methods avoiding the Monte-Carlo algorithm many of the favorable numerical properties of the traditional Drift-Diffusion model can be transferred to numerical device models that include the solution of the Boltzmann Transport Equation.
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