Abstract
Zinc selenide (ZnSe) nano particles were synthesised by chemical route at 205°C and it was confirmed by powder X-ray diffraction analysis. Utilizing the synthesised nano particles as the source material, ZnSe thin films were deposited at various substrate temperatures (Room Temperature (RT), 150°C, 250°C, 350°C and 450°C) employing electron beam evaporation method. X-ray diffraction results show that the prepared films are amorphous in nature. Raman spectral analysis confirmed the formation of ZnSe. Optical properties were studied using UV-Vis transmittance spectrum. Film prepared at RT possesses relatively high transmittance. Electrical studies carried out show that the ZnSe thin film belongs to p-type semiconductor and the film prepared at 250°C exhibits a mobility of 65.8 cm2/Vs with the resistivity of 7.543 × 103 Ω cm.
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