Abstract
Zinc Selenide (ZnSe) thin films were synthesized using the Chemical Bath Deposition (CBD) technique. X-ray diffraction (XRD) analysis was used to study the structure and crystallite size of ZnSe thin film. The surface morphology of these films was studied by the Scanning Electron Microscopic (SEM) and Atomic Force Microscopy (AFM) studies. The optical properties of the ZnSe thin films were determined using UV-Visible absorption spectrum. The optical band gap for ZnSe thin films was found to be 2.65 eV. Optical constants such as refractive index, extinction coefficient and electric susceptibility were determined from UV-Visible spectrum.The dielectric studies were carried out at different frequencies and at different temperatures for the prepared ZnSe thin films. In addition, the plasma energy of the valence electron, Penn gap or average energy gap, the Fermi energy and electronic polarizability of the ZnSe thin films were determined. The AC electrical conductivity measurement was also carried out for ZnSe thin films.
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