Abstract
Cobalt sulphide (CoS) thin films were synthesized using the Chemical Bath Deposition (CBD) technique. X-ray diffraction (XRD) analysis was used to study the structure and the crystallite size of CoS thin film. Scanning Electron Microscope (SEM) studies reveal the surface morphology of these films. The optical properties of the CoS thin films were determined using UV-Visible absorption spectrum. The optical band gap of the thin films was found to be 1.6 eV. Optical constants such as the refractive index, the extinction coefficient and the electric susceptibility were determined. The dielectric studies were carried out at different frequencies and at different temperatures for the prepared CoS thin films. In addition, the plasma energy of the valence electron, Penn gap or average energy gap, the Fermi energy and electronic polarizability of the thin films were determined. The AC electrical conductivity measurement was also carried out for the thin films. The activation energy was determined by using DC electrical conductivity measurement.
Highlights
The Cobalt sulphide (CoS) thin film was synthesized by Chemical bath deposition technique (CBD) technique
The X-ray diffraction (XRD) studies revealed that the CoS thin film was in hexagonal phase and the crystallite size was found to be 14 nm
The morphology of the CoS thin films was characterized by using Scanning Electron Microscope (SEM)
Summary
Thin films of metal chalcogenide have been studied extensively in recent years due to their applications in photovoltaic and opto-electronic devices[1]. The CoS thin films can be prepared using chemical bath deposition (CDB) method[5,6]. Synthesis of CoS thin films was carried out by a modified liquid phase chemical growth process[7,8]. The deposition parameters such as pH, temperature, concentration of the solution and deposition time influence the formation of nanocrystalline thin films and crystallite size, which in turn engineer the bandgap of the material. Chemical bath deposition technique (CBD) is one of the most promising methods for making large area high quality nanocrystalline thin films for photovoltaic applications because it is an efficient and cost effective method. Chemical bath deposition technique was employed to deposit the thin film of cobalt sulphide on microscopic glass. Chemical bath deposition technique was used for the deposition of CoS thin films. The dielectric properties of the CoS thin films were analyzed using a HIOKI 3532-50 LCR HITESTER for a frequency range from 50Hz-5MHz
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