Abstract
Graphdiyne is predicted to have a natural band gap and simultaneously possesses superior carrier mobility, which makes it potential for electronic devices. Synthesis of ultrathin graphdiyne film is highly demanded. In this work, we proposed an approach for synthesis of ultrathin graphdiyne film using graphene as a surface template, which can induce confined reaction on substrate. With all-carbon, conjugated, atomically flat structure, graphene has a strong interaction with the graphdiyne system, resulting the formation of continuous flat ultrathin graphdiyne film with thickness less than 3 nm. Raman spectra, grazing incidence X-ray diffraction, and transmission electron microscopy characterization all confirmed the features of graphdiyne. Furthermore, this strategy was also extended to the hexagonal boron nitride (hBN) surface with resembling structure, serving as a perfect dielectric layer. Field-effect transistor devices based on graphdiyne film grown on hBN were fabricated directly, and electrical transport measurements demonstrate the good conductivity with p-type characteristics of the as-obtained graphdiyne film.
Published Version
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